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S1NB80-7101 - Bridge Diodes

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S1NB80-7101 Bridge Diodes 800V, 1A Feature Small DIP (There is also SMD) Pb free terminal RoHS:Yes OUTLINE Package (House Name): 1N Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -40 to 150 ℃ Junction temperature Tj 150 ℃ Repetitive peak reverse voltage VRRM 800 V 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ 1 A Surge forward current 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM Tj=25℃ 30 A Current squared time I²t 1ms≦t＜10ms, Tj=25℃, per diode 4.5 A2s ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/5 S1NB80-7101_Rev.02(2020.
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