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Si2312 - N-Channel MOSFET

Features

  • Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package.

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Datasheet preview – Si2312

Datasheet Details

Part number Si2312
Manufacturer SiPU
File Size 107.96 KB
Description N-Channel MOSFET
Datasheet download datasheet Si2312 Datasheet
Additional preview pages of the Si2312 datasheet.

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Full PDF Text Transcription

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Si2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 35@ VGS=4.5V 56 @ VGS=2.5V NOTE The Si2312is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit 20 ±8 3.6 IDM 12 IS 1.25 PD 1.
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