P-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Features
• High Power and Current Handing Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
SI2312B
N-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 100°C/W Junction to Ambient(Note 2)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol Rating
Unit
VDS
20
V
VGS
±10
V
Drain Current-Continuous
Drain Current-Pulsed(Note 3) Power Dissipation
TA=25oC
ID
TA=70oC
6.8 5.4
A
IDM
20
A
PD
1.25
W
Note: 1.