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P-Channel 1.8-V (G-S) MOSFET
Si2311DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V
0.120 at VGS = - 1.8 V
ID (A) - 3.5 - 2.8 - 2.0
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET
APPLICATIONS • Load Switch
RoHS
COMPLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View Si2311DS (C1)* * Marking Code
Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
- 3.5 - 2.8
- 3.0 - 2.
SI2311DS Datasheet
