SI2311DS Description
P-Channel 1.8-V (G-S) MOSFET Si2311DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 3.5 - 2.8.
SI2311DS Key Features
- Halogen-free Option Available
- TrenchFET® Power MOSFET