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Si2315DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 12
rDS(on) (W)
0.055 @ VGS = - 4.5 V 0.075 @ VGS = - 2.5 V 0.118 @ VGS = - 1.8 V
ID (A)
"3.5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D Ordering Information: Si2315DS-T1
Top View Si2315DS (C5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
- 12 "8 "3.5 "2.8 "12 - 1.6 1.25 0.
SI2315DS Datasheet
