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SI2315BDS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-12V.
  • ID =-3.85A (VGS =-4.5V).
  • RDS(ON) ＜ 50mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 65mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 100mΩ (VGS =-1.8V) G1 S2 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ.

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SMD Type P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) MOSFET ■ Features ● VDS (V) =-12V ● ID =-3.85A (VGS =-4.5V) ● RDS(ON) ＜ 50mΩ (VGS =-4.5V) ● RDS(ON) ＜ 65mΩ (VGS =-2.5V) ● RDS(ON) ＜ 100mΩ (VGS =-1.8V) G1 S2 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)*1 Ta = 25℃ Ta = 70℃ Pulsed Drain Current *1 Power Dissipation *1 Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State Thermal Resistance.