The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-Channel 1.8-V (G-S) MOSFET
Si2315BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.050 at VGS = - 4.5 V - 12 0.065 at VGS = - 2.5 V
0.100 at VGS = - 1.8V
ID (A) - 3.85 - 3.4 - 2.7
FEATURES
• Halogen-free Option Available • TrenchFET® Power MOSFETs: 1.8 V Rated
Pb-free Available
RoHS*
COMPLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View Si2315BDS *(M5) * Marking Code
Ordering Information: Si2315BDS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free) Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 3.85 - 3.0
- 3.0 - 2.
SI2315BDS Datasheet
