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Si2316DS
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
D TrenchFETr Power MOSFET ID (A)
3.4 2.6
rDS(on) (W)
0.050 @ VGS = 10 V 0.085 @ VGS = 4.5 V
APPLICATIONS
D Battery Switch
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2316DS (C6)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS
5 sec
30 "20 3.4
Steady State
Unit
V
2.9 2.3 16 0.8 A
ID IDM IS
2.7
0.96 PD TJ, Tstg 0.6 –55 to 150
0.7 0.
SI2316DS Datasheet
