Si2319 - P-Channel Enhancement MOSFET

Key Features

Low On resistance.
-4.5V drive.
RoHS compliant. Si2319 P-Channel Enhancement MOSFET Si2319 Halogen-Free Product Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic.

Si2319 p-channel enhancement mosfet by Nanxin - Datasheet Preview

Datasheet Details

Part number	Si2319
Manufacturer	Nanxin
File Size	513.88 KB
Description	P-Channel Enhancement MOSFET
Datasheet	Si2319 Datasheet

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Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si2319 P-Channel Enhancement MOSFET Si2319 Halogen-Free Product Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -40 +20 -4.4 -20 0.25 0.