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Features
VDS (V) = -40V RDS(ON) 70m (VGS = 10V) ,ID = -4.4A RDS(ON) 95m (VGS = 4.5V) ,ID = -3.5A
SI2319A
SOT-23 Plastic-Encapsulate MOSFETS
SOT–23
1. GATE 2. SOURCE 3. DRAIN
Equivalent Circuit
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pu lsed Di od e C urren
IDM
Continuous Source-Drain Current(Diode Conduction)
IS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient (t?5s) Operating Junction
RthJF
TJ
Storage Temperature
TSTG
Value
-40 ± 20 -4.4 -12 -1. 25 1.25 166 150 -55 ~+15 0
Unit
V
A
W ℃ /W
℃ ℃
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