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SI2319A - -40V P-ChanneI MOSFET

General Description

SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Diode Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s

Key Features

  • VDS(V)=-40V RDS(ON).

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Datasheet Details

Part number SI2319A
Manufacturer UMW
File Size 770.15 KB
Description -40V P-ChanneI MOSFET
Datasheet download datasheet SI2319A Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW SI2319A -40V P-ChanneI MOSFET 1.Features VDS(V)=-40V RDS(ON)<70mΩ(VGS=10V), ID=-4.4A RDS(ON)<95mΩ(VGS=4.5V), ID=-3.5A 3.Pinning information Pin Symbol Description SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Diode Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Junction Temperature Range Storage Temperature 2.Applications DC/DC Converter 3 D G 2 S Symbol VDS VGS ID IDM IS PD RthJF TJ TSTG Rating -40 ±20 -4.4 -12 -1.25 1.25 166 150 -55~+150 Units V V A A A W °C/W °C °C UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 9 www.umw-ic.