Datasheet Details
| Part number | SI2319A |
|---|---|
| Manufacturer | UMW |
| File Size | 770.15 KB |
| Description | -40V P-ChanneI MOSFET |
| Datasheet | SI2319A-UMW.pdf |
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Overview: UMW SI2319A -40V P-ChanneI MOSFET 1.
| Part number | SI2319A |
|---|---|
| Manufacturer | UMW |
| File Size | 770.15 KB |
| Description | -40V P-ChanneI MOSFET |
| Datasheet | SI2319A-UMW.pdf |
|
|
|
SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Diode Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Junction Temperature Range Storage Temperature 2.Applications DC/DC Converter 3 D G 2 S Symbol VDS VGS ID IDM IS PD RthJF TJ TSTG Rating -40 ±20 -4.4 -12 -1.25 1.25 166 150 -55~+150 Units V V A A A W °C/W °C °C UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 9 www.umw-ic.com UMW SI2319A -40V P-ChanneI MOSFET 5.Electrical Characteristics TA= 25°C Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance a Diode forward voltage Dynamic Input capacitance Output capacitance Reverse transfer capacitance b Total gate charge Gate-source charge Gate-drain charge Gate resistance Switching b Turn-on delay time Rise time Turn-off delay time Fall time Symbol Conditions Min Typ Max Units V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gFS VSD VGS=0V, ID=-250µA VDS=VGS, ID=-250µA VDS=0V, VGS=±20V VDS=-40V, VGS=0V VGS=-10V, ID=-4.4A VGS=-4.5V, ID=-3.5A VDS=-5V, ID=-3A IS=-1.25A, VGS=0V -40 V -1 -3 V ±100 nA -1 µA 70 mΩ 95 mΩ 7 S -0.8 -1.25 V Ciss Coss Crss Qg Qgs Qgd Rg VDS=-20V, VGS=0V, f=1MHz VDS=-20V, VGS=-10V, ID=-3A f=1MHz 470 pF 85 pF 65 pF 11.5 17 nC 1.8 nC 3.3 nC 9 nC tD(on) tr tD(off) tf VDS=-20V RL=20Ω, ID=-1A VGEN=-4.5V, RG=6Ω 7 15 ns 15 25 ns 25 40 ns 25 42 ns 2 of 9 UTD Semiconductor Co.,Limited Nov.2024 www.umw-ic.com UMW SI2319A -40V P-ChanneI MOSFET Drain-source body diode characteristics Continuous Source-Drain Diode Cur
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| UDF | SI2319A | SOT-23 Plastic-Encapsulate MOSFETS | UDF |
| Nanxin | Si2319 | P-Channel Enhancement MOSFET | Nanxin |
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Si2319CDS | P-Channel 40 V (D-S) MOSFET | Vishay Siliconix |
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Si2319DDS | 40V P-Channel MOSFET | Vishay |
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Si2319DS | P-Channel 40-V (D-S) MOSFET | Vishay Siliconix |
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