Si2319DDS
Si2319DDS is 40V P-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen III p-channel power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Battery switch
- Motor drive control
- Load switch
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Alternate manufacturing location
SOT-23 Si2319DDS-T1-GE3 Si2319DDS-T1-BE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT
-40 ± 20 -3.6 -2.9 -2.7 b, c -2.2 b, c -15 -1.4 -0.8 b, c
-5 1.25 1.7 1.1 1 b, c 0.6 b, c -55 to +150
THERMAL RESISTANCE RATINGS
PARAMETER...
