• Part: SI2312DS
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Vishay
  • Size: 66.67 KB
Download SI2312DS Datasheet PDF
Vishay
SI2312DS
SI2312DS is N-Channel MOSFET manufactured by Vishay.
FEATURES D 1.8-V Rated D Ro HS pliant Top View Si2312DS (C2)- - Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1- E3 (Lead (Pb)-Free) Pb-free Available ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0.1 m H TA= 25_C TA= 70_C VDS VGS IDM IAS EAS IS TJ, Tstg 4.9 3.9 1.25 0.80 20 "8 15 15 11.25 1.0 - 55 to 150 3.77 3.0 0.75 0.48 Unit A m J A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-50574- Rev. E, 04-Apr-05 t v 5 sec Steady State Steady State Symbol Rth JA Rth JF Typical 75 120...