SI2312DS
SI2312DS is N-Channel MOSFET manufactured by Vishay.
FEATURES
D 1.8-V Rated D Ro HS pliant
Top View Si2312DS (C2)-
- Marking Code
Ordering Information: Si2312DS-T1 Si2312DS-T1- E3 (Lead (Pb)-Free)
Pb-free Available
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
L = 0.1 m H
TA= 25_C TA= 70_C
VDS VGS
IDM IAS EAS IS
TJ, Tstg
4.9 3.9
1.25 0.80
20 "8
15 15 11.25 1.0
- 55 to 150
3.77 3.0
0.75 0.48
Unit
A m J A W _C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-50574- Rev. E, 04-Apr-05 t v 5 sec Steady State Steady State
Symbol
Rth JA Rth JF
Typical
75 120...