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N-Channel 20 -V (D-S) MOSFET
Si2312DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V
ID (A)
4.9 4.4 3.9
Qg (Typ)
11.2
TO-236 (SOT-23)
G1 S2
3D
FEATURES D 1.8-V Rated D RoHS Compliant
Top View Si2312DS (C2)* *Marking Code
Ordering Information: Si2312DS-T1 Si2312DS-T1—E3 (Lead (Pb)-Free)
Pb-free Available
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
L = 0.
SI2312DS Datasheet
