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Si2312
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
20V 3.6A
35@ VGS=4.5V 56 @ VGS=2.5V
NOTE The Si2312is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
unless otherwise noted
Symbol
VDS VGS ID
Limit
20 ±8 3.6
IDM 12
IS 1.25 PD 1.
Si2312 Datasheet
