Si2316BDS Description
N-Channel 30-V (D-S) MOSFET Si2316BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.050 at VGS = 10 V 30 0.080 at VGS = 4.5 V ID (A)a 4.5 3.4 Qg (Typ) 3.16.
Si2316BDS Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- PWM Optimized
- 100 % Rg tested
- pliant to RoHS Directive 2002/95/EC