SI2318A - SOT-23-3L Plastic-Encapsulate MOSFET

Key Features

s.
VDS (V) = 40V.
ID = 5.6 A (VGS = 10V).
RDS(ON) ＜ 42mΩ (VGS = 10V).
RDS(ON) ＜ 51mΩ (VGS = 4.5V).
Pb.
Free Package May be Available. The G.
Suffix Denotes a Pb.
Free Lead Finish Equivalent Circuit D SOT.
23 1. GATE 2. SOURCE 3. DRAIN G S.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=70℃ Ta=25℃ Pulsed Drain Current Ta=70℃ Power Dissipation Thermal Resist.

SI2318A sot-23-3l plastic-encapsulate mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	SI2318A
Manufacturer	UMW
File Size	2.01 MB
Description	SOT-23-3L Plastic-Encapsulate MOSFET
Datasheet	SI2318A Datasheet

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UMW R UMW SI2318A SOT-23-3L Plastic-Encapsulate MOSFETS ■ Features ● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON) ＜ 42mΩ (VGS = 10V) ● RDS(ON) ＜ 51mΩ (VGS = 4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Equivalent Circuit D SOT–23 1. GATE 2. SOURCE 3. DRAIN G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=70℃ Ta=25℃ Pulsed Drain Current Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range Tc=25℃ Tc=70℃ Ta=25℃ Ta=70℃ Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 40 ±20 5.6 4.5 4.3 3.5 20 2.1 1.3 1.25 0.8 100 60 150 -55 to 150 Unit V A W ℃/W ℃ www.umw-ic.