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N-Channel 20-V (D-S) MOSFET
Si2314EDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.033 at VGS = 4.5 V 0.040 at VGS = 2.5 V 0.051 at VGS = 1.8 V
ID (A) 4.9 4.4 3.9
TO-236 (SOT-23)
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • ESD Protected: 3000 V
APPLICATIONS • LI-lon Battery Protection
D
G1 S2
3D
Top View Si2314EDS (C4)*
*Marking Code
Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free) Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
3 kΩ G
N-Channel
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
4.9 3.77 3.9 3.
SI2314EDS Datasheet
