SI2310 - N-channel MOSFET

Product Overview

Part number	SI2310
Manufacturer	PUOLOP
File Size	530.53 KB
Description	N-channel MOSFET
Datasheet	SI2310 Datasheet
Additional preview pages of the SI2310 datasheet.

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 GS REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98 0° 10° Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Not.

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Published: Jan 3, 2019 |