SI2312DS
SI2312DS is N-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 20V
- ID = 4.9 A (VGS =4.5V)
- RDS(ON) ＜ 33mΩ (VGS = 4.5V)
- RDS(ON) ＜ 40mΩ (VGS = 2.5V)
- RDS(ON) ＜ 51mΩ (VGS = 1.8V)
G1
S2
3D
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
MOSFET
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.1 0.38
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
- 1
Ta=25℃ Ta=70℃
Pulsed Drain Current
- 2
Avalanche Current
- 2
Single Avalanche Energy
L=0.1m...
