Kexin Electronics SI2312DS
N-Channel Enhancement MOSFET
| Part No. | SI2312DS |
|---|---|
| Datasheet | SI2312DS Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 20V● ID = 4.9 A (VGS =4.5V)
● RDS(ON) ＜ 33mΩ (VGS = 4.5V)
● RDS(ON) ＜ 40mΩ (VGS = 2.5V)
● RDS(ON) ＜ 51mΩ (VGS = 1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Avalanche Current *2 Single Avalanche Energy L=0.1mH Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 t≤5 sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range *1 Surface Mounted on 1” x 1” FR4 Board. *2 Pulse width limited by maximum junction temperature Symbol VDS VGS ID IDM IAS EAS PD RthJA RthJF TJ Tstg 5 sec Steady State 20 ±8 4.9 3.77 3.9 3.0 15 15 11.25 1.25 0.75 0.8 0.48 100 166 50 150 -55 to 150 Unit V A mJ W ℃/...
