HYM72V8035GS-50 module equivalent, 8m x 72-bit edo- dram module.
Characteristics (cont’ d) (note: 5,6,7,8) TA = 0 to 70 °C,VCC = 3.3 ± 0.3 V Parameter Output buffer turn-off delay from OE CAS delay time from Din Data to OE low delay C.
1 bank 8 M x 72 organisation Optimized for ECC applications Hyper Page Mode - EDO Operation Performance:
-50 tRAC tCAC t.
EDO-DRAM module (access time 50 ns) EDO-DRAM module (access time 60 ns) EDO-DRAM module (access time 50 ns) EDO-DRAM module (access time 60 ns)
Pin Names A0-A12,B0 A0-A11,B0 DQ0 - DQ71 RAS0, RAS2 CAS0 , CAS2 WE0, WE2 OE0, OE2 Vcc Vss PD1 - PD8 PDE .
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