* q Fabricated in a liquid phase epitaxy process q High reliability q Spect
SFH485
Siemens
48.96 KB
Gaaias infrared emitters.
GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 9.0 8.2 0.4 7.8 7.5 Cathode 5.9 5.5 2.
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