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SFH485P Datasheet Gaaias Infrared Emitter

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 5.0 4.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.9 5.5 1.8 1.2 29 27 1.0 0.5 Chip position 0.6 0.4 fex06306 GEX06306 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

10 mm Thermal resistance, lead length between package bottom and PC-board max.

10 mm Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Imax

Key Features

  • q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 217.

SFH485P Distributor