Datasheet4U Logo Datasheet4U.com

SFH485P - GaAIAs Infrared Emitter

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

Key Features

  • q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 217.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 5.0 4.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.9 5.5 1.8 1.2 29 27 1.0 0.5 Chip position 0.6 0.4 fex06306 GEX06306 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.