Description
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.
Features
- q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 217.
SFH485P Datasheet
