SFH483 - GaAlAs Infrared Emitter

ams OSRAM

Key Features

Fabricated in a liquid phase epitaxy process.
Anode is electrically connected to the case.
High reliability.
Matches all Si-Photodetectors.
Same package as BPX 63, BP 103, LD 242, SFH 464.
DIN humidity caregory in acc. with DIN 40 040 GQG.

SFH483 gaalas infrared emitter by ams OSRAM - Datasheet Preview

Datasheet Details

Part number	SFH483
Manufacturer	ams OSRAM
File Size	105.30 KB
Description	GaAlAs Infrared Emitter
Datasheet	SFH483 Datasheet

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Other Datasheets by ams OSRAM

Part Number	Description
SFH483E7800	GaAlAs Infrared Emitter
SFH485	GaAlAs Infrared Emitters
SFH4851	Infrared Emitter
SFH4855	Infrared Emitter
SFH400	GaAs Infrared Emitter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit BPX 63, BP 103, LD 242, SFH 464 • Anwendungsklasse nach DIN 40 040 GQC Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • Sensorik • Lichtgitter Features • Fabricated in a liquid phase epitaxy process • Anode is electrically connected to the case • High reliability • Matches all Si-Photodetectors • Same package as BPX 63, BP 103, LD 242, SFH 464 • DIN humidity caregory in acc.