SFH487P - GaAIAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

Features

q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Small tolerance: Chip surface to case surface q High pulse handling capability q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 309.

Siemens Semiconductor Group

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Datasheet Details

Part number	SFH487P
Manufacturer	SIEMENS
File Size	38.80 KB
Description	GaAIAs Infrared Emitter
Datasheet	SFH487P Datasheet
Additional preview pages of the SFH487P datasheet.

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Full PDF Text Transcription

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GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 487 P Area not flat 0.7 0.8 0.4 0.4 0.6 0.4 3.1 2.5 2.0 1.7 4.0 3.6 2.54 mm spacing ø3.1 ø2.9 1.8 1.2 29 27 4.5 4.0 Cathode 3.5 Chip position 0.6 0.4 Approx. weight 0.3 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Published: May 20, 2005 |