SFH487 - GaAIAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

Features

q Fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Good spectral match to silicon photodetectors q Same package as SFH 309, SFH 409.

Siemens Semiconductor Group

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Datasheet Details

Part number	SFH487
Manufacturer	SIEMENS
File Size	42.08 KB
Description	GaAIAs Infrared Emitter
Datasheet	SFH487 Datasheet
Additional preview pages of the SFH487 datasheet.

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Full PDF Text Transcription

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GaAIAs-IR-Lumineszenzdiode (880nm) GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat 0.7 0.4 0.6 0.4 5.2 4.5 2.54 mm spacing 0.8 0.4 4.1 3.9 4.0 3.6 Approx. weight 0.3 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Published: May 20, 2005 |