SFH487 - GaAIAs Infrared Emitter

Siemens Semiconductor Group (now Infineon)

Datasheet Details

Part number	SFH487
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	42.08 KB
Description	GaAIAs Infrared Emitter
Datasheet	SFH487 Datasheet

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

10 mm Thermal resistance, lead length between package bottom and PC-board max.

10 mm Symbol Symbol Wert Value – 55 ...

Overview

GaAIAs-IR-Lumineszenzdiode (880nm) GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat 0.7 0.4 0.6 0.4 5.2 4.5 2.54 mm spacing 0.8 0.4 4.1 3.9 4.0 3.6 Approx.

weight 0.3 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Key Features

q Fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Good spectral match to silicon photodetectors q Same package as SFH 309, SFH 409.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number	Description
SFH487P	GaAIAs Infrared Emitter
SFH480	GaAlAs Infrared Emitters
SFH481	GaAlAs Infrared Emitters
SFH482	GaAlAs Infrared Emitters
SFH483	GaAlAs Infrared Emitter
SFH484	GaAIAs Infrared Emitters
SFH485P	GaAIAs Infrared Emitter
SFH486	GaAIAs Infrared Emitter
SFH4860	GaAlAs Light Emitting Diode
SFH400	GaAs Infrared Emitter