Datasheet Details
| Part number | LD261 |
|---|---|
| Manufacturer | Siemens Group |
| File Size | 36.03 KB |
| Description | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| Datasheet |
 LD261 Datasheet
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General Description
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol W
Key Features
- q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81.