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BCR162W - PNP Silicon Digital Transistor

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BCR 162W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 162W Marking Ordering Code WUs UPON INQUIRY Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 10 15 100 250 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 240 ≤ 105 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.
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