* q Especially suitable for applications from Bereich von 400 nm bis 1100 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht 400 nm to 1100 nm q Cathode = back contact q Coated with a humidity-proof protective überzogen q Weiter Temperaturbereich Anwendungen q für Meβ-, Steu
BPY63P
Siemens Semiconductor Group
190.54 KB
Silizium-fotoelement silicon photovoltaic cell.
BPY 63 P Silizium-Fotoelement Silicon Photovoltaic Cell BPY 63 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specifi.
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