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BSM 150 GB 120 DN2
IGBT Power Module
• Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate
Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67076-A2108-A70
1200V 210A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 210 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1250
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.25 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
BSM150GB120DN2 Datasheet
