BSM150GB120DN2E3166 Overview
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 1300 W 1100 Safe operating area IC = ƒ(VCE) parameter:.
BSM150GB120DN2E3166 Datasheet
| Part number | BSM150GB120DN2E3166 |
|---|---|
| Download | BSM150GB120DN2E3166 Datasheet (PDF) |
| File Size | 130.94 KB |
| Manufacturer | Siemens Semiconductor Group |
| Description | IGBT |
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