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BSM150GB120DN2E3166
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67076-A2112-A70
1200V 210A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 210 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1250
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.
BSM150GB120DN2E3166 Datasheet
