Datasheet Summary
IGBT Power Module Preliminary data
- Half-bridge
- Including fast free-wheeling diodes
- Enlarged diode area
- Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
Package HALF-BRIDGE 2
Ordering Code C67076-A2112-A70
1200V 210A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 210 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.125 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip...