Datasheet Summary
BSM150GB170DN2 E3166
IGBT Power Module Preliminary data
- Half-bridge
- Including fast free-wheeling diodes
- Enlarged diode area
- Package with insulated metal base plate
- RG on,min = 10 Ohm Type BSM150GB170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
Package HALF-BRIDGE 2
Ordering Code C67070-A2709-A67
1700V 220A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 220 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
440 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.21 4000 20 11 F 55 / 150 / 56 Vac mm...