BSM150GAL120DN2E3166 Overview
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Unit Chopper Diode Chopper diode.
BSM150GAL120DN2E3166 Datasheet
| Part number | BSM150GAL120DN2E3166 |
|---|---|
| Datasheet | BSM150GAL120DN2E3166 Datasheet PDF (Download) |
| File Size | 80.48 KB |
| Manufacturer | Siemens Semiconductor Group |
| Description | IGBT |
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