Datasheet Summary
IGBT Power Module
- Single switch with chopper diode
- Including fast free-wheeling diodes
- Package with insulated metal base plate
Type
Package
Ordering Code
BSM150GAL120DN2E3166 1200V 210A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
HALF BRIDGE GAL 2 C67076-A2112-A70
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 210 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.25 ≤ 0.125 4000 20 11 F 55 / 150 / 56 sec Vac mm K/W °C
TC = 25...