BUZ40B Datasheet | Siemens Semiconductor Group

BUZ 40 B SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B 500 V 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C67078-S1305-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 13 mJ ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case...