BUZ 40 B
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 40 B
VDS
500 V
ID
8.5 A
RDS(on)
0.8 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 35 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V, RGS = 25 Ω
L = 10.3 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1305-A4
Values
8.5
34
10
13
Unit
A
mJ
570
± 20
150
-55 ... + 150
-55 ... + 150
≤ 0.83
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
