BUZ42 Datasheet | Siemens Semiconductor Group

BUZ 42 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 42 500 V 4A RDS(on) 2Ω Package TO-220 AB Ordering Code C67078-S1311-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4 6 m J ID = 4 A, VDD = 50 V, RGS = 25 Ω L = 24.8 m H, Tj = 25 °C Gate source voltage Power dissipation 220 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W 07/96 BUZ...