BUZ42 Datasheet | Intersil

Features - 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power - r DS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as - SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (4A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, - High Input Impedance 2.000 Formerly developmental type TA17415. - Majority Carrier Device Ohm, N- Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power ponents to PC Boards” BUZ42 TO-220AB BUZ42 MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /Key G words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSFET, SOURCE TODRAIN GATE 220AB) /Creator DRAIN (FLANGE) () /DOCIN FO pdfmark [ /Page Mode /Use Outlines /DOCVIEW CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified BUZ42 500 500 4.0 16 ±20 75 300 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W m J W/o C o C o C o C Drain to Source Breakdown Voltage (Note 1) - - - - - - - .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - - - - - . . . . VDGR Continuous Drain Current, TC = 55o C - - - - - - - - . . . ID Pulsed Drain Current (Note 3) - - - - - - - - - . . . IDM Gate to Source Voltage - - - - - - - - . ....