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Siemens Electronic Components Datasheet

BUZ90 Datasheet

Power Transistor

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BUZ 90
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 90
VDS
600 V
ID
4.5 A
RDS(on)
1.6
Maximum Ratings
Parameter
Continuous drain current
TC = 28 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 4.5 A, VDD = 50 V, RGS = 25
L = 29 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1321-A2
Values
4.5
18
4.5
8
Unit
A
mJ
320
± 20
75
-55 ... + 150
-55 ... + 150
1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96



Siemens Electronic Components Datasheet

BUZ90 Datasheet

Power Transistor

No Preview Available !

BUZ 90
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 2.8 A
Symbol
min.
V(BR)DSS
600
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
V
--
34
µA
0.1 1
10 100
nA
10 100
1.5 1.6
Semiconductor Group
2
07/96


Part Number BUZ90
Description Power Transistor
Maker Siemens Semiconductor Group
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BUZ90 Datasheet PDF






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