* q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High radiant intensity q High pulse handling capability q Available in groups q Same package as SFH 305 Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/Steu
SFH405
Siemens Semiconductor Group
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Gaas-ir-lumineszenzdiode gaas infrared emitter.
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2.84 2.24 SFH 405 2.7 2.5 2.1 1.5 2.54 spacing Collector (SFH 305) Cathode (SFH 405) 1.15 0.90 1) .
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