SFH4552 emitter equivalent, gaas-ir-lumineszenzdiode gaas infrared emitter.
q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high
Wirkungsgrad Laserdiode in diffusem Gehäuse Besond.
q Data transfer q Remote controls q For drive and control circuits
Semiconductor Group
1
1998-09-18
feo06652
fex069.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristic.
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