Substrate: Chip thickness: Topside: Backside: 4600 ± 1400 Ωcm 381 ± 15 µm Aluminium contact 1.4 µm Aluminium total cover 0.1 µm 0.4 µm Au/As q Low dark current q Low cap.

Sperrspannung Breakdown voltage 100 µA Dunkelstrom Dark current 100 V 160 V Flußspannung Forward voltage 100 mA Kapazität Capacitance f = 1 MHz, Ev = 0 80 V 150 V Kapazität pro cm2 Capacitance per cm2 120 V Betriebsspannung Operating voltage Ladungst.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts