Substrate: Chip thickness: Topside: Backside: 4600 ± 1400 Ωcm 381 ± 15 µm Aluminium contact 1.4 µm Aluminium total cover 0.1 µm 0.4 µm Au/As
q Low dark current q Low cap.
Sperrspannung Breakdown voltage 100 µA Dunkelstrom Dark current 100 V 170 V Flußspannung Forward voltage 100 mA Kapazität Capacitance f = 1 MHz, Ev = 0 80 V 150 V Kapazität pro cm2 Capacitance per cm2 120 V Betriebsspannung Operating voltage Ladungst.
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