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Siemens Electronic Components Datasheet

SMBD2838 Datasheet

Silicon Switching Diode Array

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Silicon Switching Diode Array
q For high-speed switching applications
q Common cathode
SMBD 2837
SMBD 2838
Type
SMBD 2837
SMBD 2838
Marking
sA5
sA4
Ordering Code
(tape and reel)
Q68000-A8487
Q68000-A8437
Pin Configuration
Package1)
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 35 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
Values
Unit
SMBD 2837 SMBD 2838
VR 30 50 V
VRM 35
75
IF 200 mA
IFS 4.5 A
Ptot 250 mW
Tj 150 ˚C
Tstg – 65 … + 150
Rth JA
Rth JS
600
460
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91



Siemens Electronic Components Datasheet

SMBD2838 Datasheet

Silicon Switching Diode Array

No Preview Available !

SMBD 2837
SMBD 2838
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 10 mA
IF = 50 mA
IF = 100 mA
Reverse current
VR = 30 V
VR = 50 V
SMBD 2837
SMBD 2838
SMBD 2837
SMBD 2838
AC characteristics
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100
measured at IR = 1 mA
Test circuit for reverse recovery time
Symbol
Values
Unit
min. typ. max.
V(BR)
35 –
75 –
VF
––
––
––
IR
––
––
855
1000
1200
100
100
V
mV
nA
CD – – 4 pF
trr – – 6 ns
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50
Oscillograph: R = 50
tr = 0.35 ns
C 1 pF
Semiconductor Group
2


Part Number SMBD2838
Description Silicon Switching Diode Array
Maker Siemens Semiconductor Group
Total Page 4 Pages
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