82S10 ram equivalent, 1024 x 1-bit bipolar ram.
* ORGANIZATION - 1024 X 1
* ADDRESS ACCESS TIME:
S82S10/11 - 70n5, MAXIMUM N82S10/11 - 45ns, MAXIMUM
* WRITE CYCLE TIME: S82S10/11 - 75n5, MAXIMUM N82S10/11 -.
and for systems requiring very high speed main memory. Both the 82S10 and 82S11 require a single +5 volts power supply a.
The 82S10/11 is a high speed 1024-bit random access memory organized as 1024 words X 1 bit. With a typical access time of 30ns, it is ideal for cache buffer applications and for systems requiring very high speed main memory. Both the 82S10 and 82S11 .
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