| Title | |
| Description | SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.It's wid... |
| Features |
Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No. SVD1055SA SVD1055SATR
Package SOP-8-225-1.27 SOP-8-225-1.27
Marking SVD1055SA SVD1055SA
Hazardous substance control Halogen free Halogen free
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
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| Datasheet |
 SVD1055SA Datasheet - 333.72KB |
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