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SVD2N60DTR Datasheet 600V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVD2N60DTR datasheet PDF. This datasheet also includes the SVD2N60M variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVD2N60M-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD2N60DTR
Manufacturer Silan Microelectronics
File Size 513.35 KB
Description 600V N-CHANNEL MOSFET
Download SVD2N60DTR Download (PDF)

General Description

SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Overview

SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL.

Key Features

  • ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ. )=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.