Description
SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
2
structure VDMOS technology.The improved
1 3
TO-251-3L
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power suppliers, DC-DC converters an
Features
- TO-220-3L
TO-220F-3L
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2A, 650V,RDS(on)(typ. )=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.