SVD3410T
Description
SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 17A,100V,RDS(on)(typ.)=68m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
