SVD3410D Overview
SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. It is widely used in vehicle...
SVD3410D Key Features
- 17A,100V,RDS(on)(typ.)=68m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability