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SVD830D Datasheet 500V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVD830D datasheet PDF. This datasheet also includes the SVD830T variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVD830T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD830D
Manufacturer Silan Microelectronics
File Size 678.67 KB
Description 500V N-CHANNEL MOSFET
Download SVD830D Download (PDF)

General Description

SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Overview

SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL.

Key Features

  • ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.