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SVF10N60CFJD - 600V N-CHANNEL MOSFET

Download the SVF10N60CFJD datasheet PDF. This datasheet also covers the SVF10N60CF variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 10A,600V,RDS(on)(typ. )=0.75@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF10N60CF-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF10N60CFJD
Manufacturer Silan Microelectronics
File Size 305.72 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N60CFJD Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF10N60CFJ 600V N-CHANNEL MOSFET
SVF10N60CF 600V N-CHANNEL MOSFET
SVF10N60CT 600V N-CHANNEL MOSFET
SVF10N60F 600V N-CHANNEL MOSFET
SVF10N60FG 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF10N60CF/T/FJD_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,600V,RDS(on)(typ.)=0.75@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 11 23 3 1.Gate 2.Drain 3.
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