SVF10N60CFJD Datasheet - Silan Microelectronics

600V N-CHANNEL MOSFET

SVF10N60CFJD Features

* 10A,600V,RDS(on)(typ.)=0.75@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 11 23 3 1.Gate 2.Drain 3.Source TO-220FJD-3L 1 23 TO-220F-3L 1 23 TO-220-3L SVFXNEXXCX Silan VDMOS Code of F-Cell process Nominal current,using 1 o

SVF10N60CFJD General Description

SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performan.

SVF10N60CFJD Datasheet (305.72 KB)

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Datasheet Details

Part number:

SVF10N60CFJD

Manufacturer:

Silan Microelectronics

File Size:

305.72 KB

Description:

600v n-channel mosfet.

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SVF10N60CFJD 600V N-CHANNEL MOSFET Silan Microelectronics

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SVF10N60CFJD Features

SVF10N60CFJD General Description

Datasheet Details

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