SVF10N60CFJD
Description
SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V
- Special Features indication, May be omitted
- Example: E denotes embeded ESD structure
