SVF10N60CFJ - 600V N-CHANNEL MOSFET

Silan Microelectronics

General Description

SVF10N60CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Key Features

10A, 600V, RDS(on)(typ. )=0.75@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.

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SVF10N60CFJ 600v n-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVF10N60CFJ
Manufacturer	Silan Microelectronics
File Size	368.53 KB
Description	600V N-CHANNEL MOSFET
Datasheet	SVF10N60CFJ Datasheet

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SVF10N60CFJ_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A, 600V, RDS(on)(typ.)=0.75@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220FJ-3L ORDERING INFORMATION Part No.