Datasheet Summary
SVF10N60CFJ_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N60CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
Features
- 10A, 600V, RDS(on)(typ.)=0.75@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
NOMENCLATURE
1 3
1.Gate...